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Mukherjee, P., Shade, C. M., Yingling, A.M., Lamont, D. N ., Waldeck, D. H. & Petoud, S.

Lanthanide Sensitization in II-VI Semiconductor Materials : A Case Study with Terbium (III) and Europium (III) in Zinc Sulfide Nanoparticles

J. Phys. Chem. A (2011) 115 (16) 4031-4041 - doi : 10.1021/jp109786w

par Frapart - publié le , mis à jour le

Abstract :

This work explores the sensitization of luminescent lanthanide Tb3+ and Eu3+ cations by the electronic structure of zinc sulfide (ZnS) semiconductor nanoparticles. Excitation spectra collected while monitoring the lanthanide emission bands reveal that the ZnS nanoparticles act as an antenna for the sensitization of Tb3+ and Eu3+. The mechanism of lanthanide ion luminescence sensitization is rationalized in terms of an energy and charge transfer between trap sites and is based on a semiempirical model, proposed by Dorenbos and co-workers (Dorenbos, P. J. Phys. : Condens. Matter2003, 15, 8417−8434 ; J. Lumin.2004, 108, 301−305 ; J. Lumin.2005, 111, 89−104. Dorenbos, P. ; van der Kolk, E. Appl. Phys. Lett.2006, 89, 061122-1−061122-3 ; Opt. Mater.2008, 30, 1052−1057. Dorenbos, P. J. Alloys Compd.2009, 488, 568−573 ; references 1−6.) to describe the energy level scheme. This model implies that the mechanisms of luminescence sensitization of Tb3+ and Eu3+ in ZnS nanoparticles are different ; namely, Tb3+ acts as a hole trap, whereas Eu3+ acts as an electron trap. Further testing of this model is made by extending the studies from ZnS nanoparticles to other II−VI semiconductor materials ; namely, CdSe, CdS, and ZnSe.